Optical properties of PEDOT:PSS-silicon solar cells
DOI:
https://doi.org/10.17721/1812-5409.2018/4.17Abstract
We study the optical and electrical losses in PEDOT:PSS/n-Si solar cells using spectroscopic ellipsometry and current-voltage measurements. The optical constants and thickness of the PEDOT:PSS films were studied using spectroscopic ellipsometry performed by a SE-2000 SEMILAB ellipsometer spanning the NIR–VIS–UV range with a resolution of 5 nm. The results were analyzed using a four-layer model involving the ntype silicon (001) substrate, interfacial layer between Si and polymer films, PEDOT:PSS thin film, and a surface roughness layer. The key to understand the origin of the losses is that the studied junctions have an interfacial layer between organic (PEDOT:PSS) and inorganic substrates. The dielectric functions of the PEDOT:PSS were fitted with the known thickness and the assumption of a negligible roughness (i.e. that the roughness is much smaller than the wavelength). Using the complex dielectric function, the optical constants (refractive index n and extinction coefficient k) were calculated. In addition to real and imaginary part of the refractive index, the absorption coefficient was calculated. The produced hybrid solar cells show efficiencies around 7%.
Key words: PEDOT:PSS/n-Si solar cells, spectroscopic ellipsometry, interfacial layer, optical constants.
Pages of the article in the issue: 118-121
Language of the article: Ukrainian
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