Features of changes in optical response within the surface oxide layer in Si and GaAs
DOI:
https://doi.org/10.17721/1812-5409.2018/3.15Abstract
In this paper, the angular ellipsometric studies of natural oxidized surface layer on silicon and gallium arsenide are carried out. The mean wavelength of probe radiation beam was ? = 625 nm, with FWHM = 10 nm. Angular dependencies of ellipsometric parameters ? and ? (azimuth of restored linear polarization and phase shift between p- and s- components of reflected radiation) were recorded. The combined approach for their analysis, which consists in sectioning the investigated medium near-surface area into 500 ultrathin layers interconnected by the dielectric permittivity function and determining the ellipsometric parameters of the medium by applying matrix methods for calculating the amplitudes and phases of the reflected waves from such a system in two polarizations, was used. The depth of the optical response profile was determined by the method of differential evolution by varying optical constants in accordance with the chosen theoretical model to achieve a minimum deviation (MSE, Mean Squared Error) between the calculated and measured ellipsometric parameters. Optical response profiles corresponding to the models of half-infinite medium, a homogeneous layer, as well as the linear and exponential profiles are analyzed.
Key words: ellipsometry, multilayer model, oxide layer, silicon, gallium arsenide.
Pages of the article in the issue: 99 - 104
Language of the article: Ukrainian
References
LUKEŠ, F. (1972). Oxidation of Si and GaAs in air at room temperature. Surface Science. 30(1), 91–100 pp. doi: 10.1016/0039-6028(72)90025-8.
TORKHOV, N. A. (2003). Formation of a native-oxide structure on the surface of n-GaAs under natural oxidation in air. Semiconductors. 37(10), 1205–1213 pp. doi: 10.1134/1.1619513.
MORITA, M., OHMI, T., HASEGAWA, E., KAWAKAMI, M., and OHWADA, M. (1990). Growth of native oxide on a silicon surface. Journal of Applied Physics. 68(3), 1272–1281 pp. doi: 10.1063/1.347181.
GRITSENKO, V. A. (2009). Structure of silicon/oxide and nitride/oxide interfaces. Uspekhi Fizicheskih Nauk. 179(9), p. 921. doi: 10.3367/ufnr.0179.200909a.0921.
WATANABE, K., HASHIBA, M., HIROHATA, Y., NISHINO, M., and YAMASHINA, T. (1979). Oxide layers on GaAs prepared by thermal, anodic and plasma oxidation: In-depth profiles and annealing effects. Thin Solid Films. 56(1-2), 63–73 pp. doi: 10.1016/0040-6090(79)90052-x.
GÉRARD, I., DEBIEMME-Chouvy, C., VIGNERON, J., BELLENGER, F., KOSTELITZ, S., & ETCHEBERRY, A. (1999). Local oxide growth on the n-GaAs surface studied by small area XPS. Surface Science. 433-435, 131–135. doi: 10.1016/s0039-6028(99)00071-0.
YAMPOLSKIY, A. L., MAKARENKO, O. V., POPERENKO, L. V., and LYSIUK, V. O. (2018) Ellipsometry of hybrid noble metal-dielectric nanostructures. Semiconductor Physics, Quantum Electronics and Optoelectronics. 21, №4, p. 412.
BERNING, P. H. Theory and calculations of optical thin films. In: Physics of Thin Films, Vol. 1, ed. by G. Hass (Academic, San Diego, 1963), p. 69.
STORN, R., and PRICE, K. (1997) Differential evolution – a simple and efficient heuristic for global optimization over continuous spaces. J. Global Optim. 11, №4, 341-359 p.
JELLISON, G. E. (1992). Optical functions of silicon determined by two-channel polarization modulation ellipsometry. Optical Materials. 1(1), 41–47 pp. doi: 10.1016/0925-3467(92)90015-f.
JELLISON, G. E. (1992). Optical functions of GaAs, GaP, and Ge determined by two-channel polarization modulation ellipsometry. Optical Materials. 1(3), 151–160 pp. doi: 10.1016/0925-3467(92)90022-f.
Downloads
Issue
Section
License
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
